The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Aug. 12, 2015
Kanto Denka Kogyo Co., Ltd., Tokyo, JP;
Yoshinao Takahashi, Gunma, JP;
Korehito Kato, Gunma, JP;
KANTO DENKA KOGYO CO., LTD., Chiyoda-Ku, Tokyo, JP;
Abstract
Provided are an etching gas composition and an etching method which enable an object, such as a substrate to be etched, to be efficiently precision processed during thin film formation, and which enable efficient removal of an accumulated or adhered silicon-based compound, other than the object such as the substrate to be etched, by means of plasma etching. The etching gas composition is characterized by containing: (1) a fluorinated halogen compound represented by XF (X is Cl, Br or I) as a primary component; (2) F; (3) a fluorinated halogen compound represented by XF(X is Cl, Br or I, and n is an integer of 3 or higher); (4) HF; (5) O; and (6) at least one type of halogen gas molecule selected from among Cl, Brand I.