The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Jan. 10, 2014
Applicants:
Osram Gmbh, Munich, DE;
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Inventors:
Bianca Pohl-Klein, Gilching, DE;
Juliane Kechele, Stadtbergen, DE;
Simon Dallmeir, Koenigsbrunn, DE;
Assignees:
OSRAM GMBH, München, DE;
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 11/77 (2006.01); C09K 11/08 (2006.01); C04B 35/581 (2006.01); C04B 35/584 (2006.01); C04B 35/591 (2006.01); C09K 11/64 (2006.01);
U.S. Cl.
CPC ...
C09K 11/7734 (2013.01); C04B 35/581 (2013.01); C04B 35/584 (2013.01); C04B 35/591 (2013.01); C09K 11/0883 (2013.01); C09K 11/646 (2013.01); C09K 11/7728 (2013.01); C04B 2235/3203 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/3208 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3227 (2013.01); C04B 2235/3229 (2013.01); C04B 2235/3852 (2013.01); C04B 2235/3865 (2013.01); C04B 2235/3873 (2013.01); C04B 2235/442 (2013.01); C04B 2235/445 (2013.01); C04B 2235/446 (2013.01); C04B 2235/449 (2013.01); C04B 2235/5409 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/664 (2013.01);
Abstract
A method is provided for producing a pulverulent precursor material of the general formula M1M2(Si,Al)(O,N)or M1M2SiAlNhaving the method steps A) producing a pulverulent mixture of starting materials, B) calcining the mixture under a protective gas atmosphere and subsequent grinding, wherein in method step A) at least one nitride with a specific surface area of greater than 2 m/g is selected as starting material. A pulverulent precursor material and the use thereof are additionally provided.