The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Feb. 28, 2014
Ipg Photonics Corporation, Oxford, MA (US);
Vijay Kancharla, Shrewsbury, MA (US);
William Shiner, Millbury, MA (US);
Steven Maynard, Dudley, MA (US);
Jeffrey P. Sercel, Hollis, NH (US);
Marco Mendes, Manchester, NH (US);
Rouzbeh Sarrafi, Fremont, NH (US);
IPG PHOTONICS CORPORATION, Oxford, MA (US);
Abstract
Laser processing of sapphire is performed using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm (hereinafter 'QCW laser'). Laser processing of sapphire using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 10%) and in an inert gas atmosphere such as argon or helium. Laser processing of sapphire using a QCW laser may further include the use of an assist laser having a shorter wavelength and/or pulse duration to modify a property of the sapphire substrate to form absorption centers, which facilitate coupling of the laser light pulses of the QCW laser into the sapphire.