The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Oct. 11, 2017
Applicant:
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Inventors:
Didier Herault, Grenoble, FR;
Pierre Malinge, Bernin, FR;
Assignee:
STMICROELECTRONICS (CROLLES 2) SAS, Crolles, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/365 (2011.01); H04N 5/353 (2011.01); H04N 5/374 (2011.01); H04N 5/355 (2011.01); H04N 5/3745 (2011.01); H04N 5/235 (2006.01);
U.S. Cl.
CPC ...
H04N 5/365 (2013.01); H04N 5/3537 (2013.01); H04N 5/35572 (2013.01); H04N 5/35581 (2013.01); H04N 5/3741 (2013.01); H04N 5/37452 (2013.01); H04N 5/37457 (2013.01); H04N 5/2357 (2013.01); H04N 5/37455 (2013.01);
Abstract
An image sensor includes a plurality of pixels each including a first photodiode linked to a capacitive readout node by a first transistor, and a second photodiode linked to a first capacitive storage node by a second transistor, the first capacitive node being linked to the readout node by a third transistor, and the readout node being linked to a node for applying a reset potential by a fourth transistor.