The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Jul. 23, 2018
Skyworks Solutions, Inc., Woburn, MA (US);
Ambarish Roy, Waltham, MA (US);
Guillaume Alexandre Blin, Carlisle, MA (US);
Skyworks Solutions, Inc., Woburn, MA (US);
Abstract
A process for fabricating a semiconductor die involves providing a semiconductor substrate, forming a first field-effect transistor on the semiconductor substrate, the first field-effect transistor having a source, a drain, a gate, and a body, forming a coupling path that couples the body of the first field-effect transistor to the gate of the first field-effect transistor, the coupling path including a diode, and forming an adjustable impedance network coupled between the body of the first field-effect transistor and a ground reference, the adjustable impedance network being configured to reduce radio-frequency distortion in the first field-effect transistor.