The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2019

Filed:

Sep. 09, 2016
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo-shi, Kyoto, JP;

Inventor:

Marcus Rinkiö, Rajamäki, FI;

Assignee:

MURATA MANUFACTURING CO., LTD., Nagaokakyo-Shi, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81B 3/00 (2006.01); G01P 3/14 (2006.01); H03B 5/30 (2006.01); G01P 15/08 (2006.01); G01P 15/125 (2006.01); G01C 19/5712 (2012.01);
U.S. Cl.
CPC ...
H03B 5/30 (2013.01); B81B 3/0045 (2013.01); G01C 19/5712 (2013.01); G01P 3/14 (2013.01); G01P 15/125 (2013.01); B81B 2201/0235 (2013.01); B81B 2201/0242 (2013.01); B81B 2203/04 (2013.01); G01P 2015/0822 (2013.01); H03B 2201/0208 (2013.01);
Abstract

A microelectromechanical device structure comprises a supporting structure wafer. A cavity electrode is formed within a cavity in the supporting structure wafer. The cavity electrode forms a protruding structure from a base of the cavity towards the functional layer, and the cavity electrode is connected to a defined electrical potential. The cavity electrode comprises a silicon column within the cavity in the supporting structure wafer, which is partially or entirely surrounded by a cavity. One or more cavity electrodes may be utilized for adjusting a frequency of an oscillation occurring within the functional layer.


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