The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2019

Filed:

Jan. 03, 2018
Applicant:

Xiamen Sanan Integrated Circuit Co., Ltd., Xiamen, Fujian Province, CN;

Inventors:

Babu Dayal Padullaparthi, Queensway, HK;

Feng Lin, Xiamen, CN;

Assignee:

XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD., Xiamen, Fujian Province, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/125 (2006.01); H01S 5/183 (2006.01); H01S 5/042 (2006.01); H01S 5/30 (2006.01);
U.S. Cl.
CPC ...
H01S 5/125 (2013.01); H01S 5/0425 (2013.01); H01S 5/18361 (2013.01); H01S 5/309 (2013.01); H01S 5/3054 (2013.01);
Abstract

A vertical cavity surface emitting laser device includes a substrate, a first-type doped distributed Bragg reflector (DBR) disposed on the substrate, a first electrode disposed on the substrate, an active layer disposed on the first-type doped DBR, a second-type DBR disposed on the active layer, and a second electrode disposed on the second-type DBR. The second-type DBR defines a first doping concentration region, and a second doping concentration region disposed between the first doping concentration region and the active layer and that has a doping concentration less than that of the first doping concentration region. The second-type doped DBR has a confinement member formed in the first doping concentration region, and defining an aperture.


Find Patent Forward Citations

Loading…