The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2019

Filed:

Jun. 16, 2015
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Hubert Halbritter, Dietfurt, DE;

Mario Wiengarten, Woerth an der Donau, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/022 (2006.01); H04N 3/02 (2006.01); H04N 13/254 (2018.01);
U.S. Cl.
CPC ...
H01S 5/0071 (2013.01); H01S 5/0226 (2013.01); H01S 5/02208 (2013.01); H01S 5/02228 (2013.01); H01S 5/02252 (2013.01); H01S 5/02292 (2013.01); H01S 5/02296 (2013.01); H04N 13/254 (2018.05); H01L 2224/48091 (2013.01); H01S 5/02268 (2013.01); H01S 5/02288 (2013.01); H04N 2213/001 (2013.01);
Abstract

Various embodiments may relate to a semiconductor laser device, including at least one laser diode, and at least one reflection surface which reflects diffusely and which is irradiated by the laser diode during operation, and an additional light-nontransmissive housing body having a cutout. The laser diode is the sole light source of the semiconductor laser device. The laser diode is mounted immovably relative to the at least one reflection surface. Light emitted by the semiconductor laser device during operation has the same spectral components as, or fewer spectral components than, light emitted by the laser diode. An interspace between the laser diode and the at least one reflection surface is free of an optical assembly. A light-emitting area of the semiconductor laser device is greater than a light-emitting area of the laser diode by at least a factor of 100.


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