The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Feb. 24, 2018
Method for producing an organic cmos circuit and organic cmos circuit protected against uv radiation
Applicant:
Commissariat a L'energie Atomique ET Aux Energies, Paris, FR;
Inventors:
Mohammed Benwadih, Champigny sur Marne, FR;
Romain Coppard, Voiron, FR;
Olivier Poncelet, Grenoble, FR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 51/05 (2006.01); H01L 51/00 (2006.01); H01L 27/28 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0537 (2013.01); H01L 27/283 (2013.01); H01L 51/0017 (2013.01); H01L 51/055 (2013.01); H01L 51/0512 (2013.01); H01L 51/0035 (2013.01); H01L 51/052 (2013.01); H01L 2251/303 (2013.01);
Abstract
An organic CMOS circuit including a substrate having an N-type organic transistor and a P-type organic transistor formed thereon, the transistors respectively including a layer of N-type semiconductor material and a layer of P-type semiconductor material. A surface of each of the semiconductor material layers, opposite to the substrate, is covered with an anti-ultraviolet layer made of electrically-insulating material absorbing and/or reflecting ultra-violet rays.