The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10283704 B1

PDF
Full Text
Expired
Date of Patent:
May. 07, 2019

Filed:

Sep. 26, 2017
Applicants:

International Business Machines Corporation, Armonk, NY (US);

Rheinisch-westfälische Technische Hochschule (Rwth) Aachen, Aachen, DE;

Inventors:

Vara S. P. Jonnalagadda, Wallisellen, CH;

Benedikt J. Kersting, Rueschlikon, CH;

Wabe W. Koelmans, Adliswil, CH;

Martin Salinga, Thalwil, CH;

Abu Sebastian, Adliswil, CH;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H01L 45/00 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); G11C 11/5678 (2013.01); G11C 13/004 (2013.01); G11C 13/0004 (2013.01); G11C 13/0069 (2013.01); H01L 45/122 (2013.01); H01L 45/144 (2013.01);
Abstract

The invention is notably directed to a resistive memory device comprising a control unit for controlling the resistive memory device and a plurality of memory cells. The plurality of memory cells includes a first terminal, a second terminal and a phase change segment comprising a phase-change material for storing information in a plurality of resistance states. The phase change segment is arranged between the first terminal and the second terminal. The phase change material consists of antimony. Furthermore, at least one of the dimensions of the phase change segment is smaller than 15 nanometers. Additional implementations of the resistive memory device include a related method, a related control unit, a related memory cell and a related computer program product.


Find Patent Forward Citations

Jonnalagadda, Vara S. P.. (2019). Resistive memory device (U.S. Patent No. 10283704). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10283704

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