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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10283698 B1

PDFFull Text
Date of Patent:
May. 07, 2019

Filed:

Aug. 02, 2017

Semiconductor devices and methods of fabricating the same

Applicants:

Seung Pil Ko, Hwaseong-si, KR;

Kiseok Suh, Hwaseong-si, KR;

Kilho Lee, Busan, KR;

Daeeun Jeong, Yongin-si, KR;

Inventors:

Seung Pil Ko, Hwaseong-si, KR;

Kiseok Suh, Hwaseong-si, KR;

Kilho Lee, Busan, KR;

Daeeun Jeong, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Neil R Prasad

Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01); H01L 21/768 (2006.01); H01L 43/12 (2006.01); H01L 23/485 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 21/76804 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/485 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 27/222 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01);
Abstract

A device, which may include a semiconductor device, may include a contact plug, a first barrier metal covering a bottom surface of the contact plug and a lower sidewall of the contact plug, such that the first barrier metal exposes an upper sidewall of the contact plug, and an insulation pattern covering the upper sidewall of the contact plug such that the insulation pattern isolates the first barrier metal from exposure. A magnetic tunnel junction pattern may cover a top surface of the contact plug. Each element of the contact plug, the first barrier metal, and the insulation pattern may be in a contact hole of a first interlayer dielectric layer.

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