The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2019

Filed:

Jun. 14, 2017
Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

Jong Kyun You, Ansan-si, KR;

Byoung Kyu Park, Ansan-si, KR;

Chang Yeon Kim, Ansan-si, KR;

Chae Hon Kim, Ansan-si, KR;

Assignee:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/22 (2010.01); H01L 33/44 (2010.01); H01L 33/48 (2010.01); H01L 33/50 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01); H01L 33/08 (2010.01);
U.S. Cl.
CPC ...
H01L 33/38 (2013.01); H01L 33/22 (2013.01); H01L 33/44 (2013.01); H01L 33/486 (2013.01); H01L 33/501 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 33/08 (2013.01); H01L 33/387 (2013.01); H01L 33/505 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/49175 (2013.01);
Abstract

A light emitting diode including a semiconductor stack including a lower semiconductor layer, an active layer, and an upper semiconductor layer; an upper electrode connected to the upper semiconductor layer and including an electrode pad and extensions extending from the electrode pad; and a lower electrode connected to the lower semiconductor layer. The electrode pad includes a first electrode pad having an elongated shape, disposed along a first side of the upper semiconductor layer, and covering the upper semiconductor layer near the first side of the upper semiconductor layer, and the extensions include an edge extension extending along an edge of the upper semiconductor layer in the electrode pad and surrounding a luminous region and middle extensions extending from the edge extension or the electrode pad and dividing the luminous region into a plurality of luminous regions.


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