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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10283668 B1

PDFFull Text
Date of Patent:
May. 07, 2019

Filed:

Aug. 05, 2016

Photovoltaic devices with an interfacial band-gap modifying structure and methods for forming the same

Applicants:

International Business Machines Corporation, Armonk, NY (US);

Egypt Nanotechnology Center, Cairo-Alexandria, EG;

Inventors:

Keith E. Fogel, Hopewell Junction, NY (US);

Jeehwan Kim, Los Angeles, CA (US);

Devendra K. Sadana, Pleasantville, NY (US);

George S. Tulevski, White Plains, NY (US);

Ahmed Abou-Kandil, Elmsford, NY (US);

Hisham S. Mohamed, Clifton Park, NY (US);

Mohamed Saad, White Plains, NY (US);

Osama Tobail, Elmsford, NY (US);

Assignees:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

EGYPT NANOTECHNOLOGY CENTER, Cairo-Alexandria, EG;

Attorneys:

Scully, Scott, Murphy & Presser, P.C.

L. Jeffrey Kelly

Primary Examiner:

Eli S Mekhlin

Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 31/075 (2012.01); H01L 31/0232 (2014.01); H01L 31/07 (2012.01); H01L 31/056 (2014.01); H01L 31/028 (2006.01); H01L 31/20 (2006.01); H01L 31/0256 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1884 (2013.01); H01L 31/028 (2013.01); H01L 31/02327 (2013.01); H01L 31/022466 (2013.01); H01L 31/022483 (2013.01); H01L 31/056 (2014.12); H01L 31/07 (2013.01); H01L 31/075 (2013.01); H01L 31/20 (2013.01); H01L 2031/0344 (2013.01); Y02E 10/52 (2013.01); Y02E 10/548 (2013.01);
Abstract

A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.

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