The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
May. 31, 2017
Applicant:
Stmicroelectronics (Research & Development) Limited, Marlow, GB;
Inventor:
Laurence Stark, Edinburgh, GB;
Assignee:
STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED, Marlow, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 31/02 (2006.01); H01L 31/0352 (2006.01); G01J 1/44 (2006.01); H01L 31/103 (2006.01); H01L 31/18 (2006.01); H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
H01L 31/107 (2013.01); H01L 29/72 (2013.01); H01L 31/02027 (2013.01); H01L 31/0352 (2013.01); H01L 31/1037 (2013.01); H01L 31/1804 (2013.01); G01J 2001/4466 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract
An avalanche diode includes a PN junction with a first deep trench structure adjacent to the PN junction. An area via which photons impinge is provided, the PN junction extending substantially vertically with respect to the area. An avalanche diode array can be formed to include a number of avalanche diodes.
Quick Actions:
Stark, Laurence. (2019). Avalanche diode including vertical pn junction (U.S. Patent No. 10283664). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10283664
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile