The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2019

Filed:

Sep. 14, 2015
Applicant:

The Board of Regents of the University of Oklahoma, Norman, OK (US);

Inventor:

Rui Q. Yang, Norman, OK (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B82Y 20/00 (2011.01); H02S 10/30 (2014.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 31/0725 (2012.01); H01L 31/0735 (2012.01);
U.S. Cl.
CPC ...
H01L 31/035236 (2013.01); H01L 31/0304 (2013.01); H01L 31/0725 (2013.01); H01L 31/0735 (2013.01); H02S 10/30 (2014.12); B82Y 20/00 (2013.01); Y02E 10/544 (2013.01);
Abstract

Photovoltaic (PV) and photodetector (PD) devices, comprising a plurality of interband cascade (IC) stages, wherein the IC stages comprise an absorption region with a type-I superlattice and/or a bulk semiconductor material having a band gap, the absorption region configured to absorb photons, an intraband transport region configured to act as a hole barrier, and an interband tunneling region configured to act as an electron barrier, wherein the absorption region, the intraband transport region, and the interband tunneling region are positioned such that electrons will flow from the absorption region to the intraband transport region to the interband tunneling region.


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