The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2019

Filed:

Mar. 03, 2017
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Hans-Juergen Eickelmann, Nieder-Hilbersheim, DE;

Michael Haag, Rodenbach, DE;

Ruediger Kellmann, Mainz, DE;

Markus Schmidt, Seibersbach, DE;

Johannes Windeln, Bodenheim, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/0216 (2014.01); H01L 31/0392 (2006.01); H01L 31/056 (2014.01); H01L 31/048 (2014.01); H01L 31/0749 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02168 (2013.01); H01L 31/022425 (2013.01); H01L 31/022433 (2013.01); H01L 31/022483 (2013.01); H01L 31/03923 (2013.01); H01L 31/048 (2013.01); H01L 31/056 (2014.12); H01L 31/0749 (2013.01); H01L 31/186 (2013.01); H01L 31/1884 (2013.01); Y02E 10/52 (2013.01); Y02E 10/541 (2013.01); Y02P 70/521 (2015.11);
Abstract

A stacked-layered thin film solar cell. The solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.


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