The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Jul. 26, 2016
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
Fumiki Nakano, Sakai, JP;
Sumio Katoh, Sakai, JP;
SHARP KABUSHIKI KAISHA, Sakai, JP;
Abstract
A semiconductor device includes a TFT (), the TFT including a gate electrode (), a gate insulating layer () covering the gate electrode, a metal oxide layer (A) including a channel region (), a source contact region () and a drain contact region (), a first electrode (A) in contact with the source contact region, an insulating layer () formed on the metal oxide layer and the first electrode, the insulating layer having a first opening () therein through which a portion of the metal oxide layer is exposed, and a light-transmissive second electrode () formed on the insulating layer and in a contact hole including the first opening, wherein the second electrode () is in contact with the drain contact region () in the contact hole, the drain contact region () is a portion of a region () of the metal oxide layer (A) that is exposed through the contact hole, and as seen from a direction normal to a substrate (), the second electrode () does not overlap the channel region ().