The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Nov. 03, 2017
Ams Ag, Premstaetten, AT;
Martin Knaipp, Premstaetten, AT;
Georg Roehrer, Lebring-Sankt Margarethen, AT;
Jong Mun Park, Graz, AT;
ams AG, Premstaetten, AT;
Abstract
The field effect transistor device comprises a substrate () of semiconductor material, a body well of a first type of electric conductivity in the substrate, a source region in the body well, the source region having an opposite second type of electric conductivity, a source contact () on the source region, a body contact region of the first type of electric conductivity in the body well, a body contact () on the body contact region, and a gate electrode layer () partially overlapping the body well. A portion (*) of the gate electrode layer () is present between the source contact () and the body contact ().