The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Sep. 11, 2015
Boe Technology Group Co., Ltd., Beijing, CN;
Hefei Xinsheng Optoelectronics Technology Co., Ltd., Hefei, Anhui, CN;
Botao Song, Beijing, CN;
Liang Lin, Beijing, CN;
Zhixiang Zou, Beijing, CN;
Yinhu Huang, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., Hefei, Anhui, CN;
Abstract
A thin film transistor and manufacturing method thereof, an array substrate and a display device are disclosed. The thin film transistor includes a source electrode, a drain electrode and an active layer; the source electrode, the drain electrode and the active layer are disposed in a same layer, the source electrode and the drain electrode are separately joined to the active layer through their respective side faces, a material of the source electrode and the drain electrode is metal, and a material of the active layer is a metal oxide semiconductor in correspondence with material of the source electrode and the drain electrode. With the thin film transistor, procedures can be decreased, thereby reducing costs.