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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10283628 B1

PDFFull Text
Date of Patent:
May. 07, 2019

Filed:

Sep. 11, 2015

Thin film transistor with source electrode, drain electrode and active layer prepared in a same layer and method for manufacturing the same, array substrate and display device

Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Hefei, Anhui, CN;

Inventors:

Botao Song, Beijing, CN;

Liang Lin, Beijing, CN;

Zhixiang Zou, Beijing, CN;

Yinhu Huang, Beijing, CN;

Assignees:

BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;

HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., Hefei, Anhui, CN;

Attorney:

Ladas & Parry LLP

Primary Examiner:

Caleb E Henry

Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/383 (2006.01); H01L 29/786 (2006.01); H01L 29/417 (2006.01); H01L 27/12 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66969 (2013.01); H01L 21/02565 (2013.01); H01L 21/02614 (2013.01); H01L 21/383 (2013.01); H01L 27/1288 (2013.01); H01L 29/41733 (2013.01); H01L 29/45 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01);
Abstract

A thin film transistor and manufacturing method thereof, an array substrate and a display device are disclosed. The thin film transistor includes a source electrode, a drain electrode and an active layer; the source electrode, the drain electrode and the active layer are disposed in a same layer, the source electrode and the drain electrode are separately joined to the active layer through their respective side faces, a material of the source electrode and the drain electrode is metal, and a material of the active layer is a metal oxide semiconductor in correspondence with material of the source electrode and the drain electrode. With the thin film transistor, procedures can be decreased, thereby reducing costs.

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Song, Botao. (2019). Thin film transistor with source electrode, drain electrode and active layer prepared in a same layer and method for manufacturing the same, array substrate and display device (U.S. Patent No. 10283628). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10283628

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