The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2019

Filed:

Mar. 03, 2018
Applicant:

Pixart Imaging Incorporation, HsinChu, TW;

Inventors:

Chih-Ming Sun, HsinChu, TW;

Hsin-Hui Hsu, HsinChu, TW;

Ming-Han Tsai, HsinChu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/762 (2006.01); H01L 29/51 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/518 (2013.01); H01L 21/3086 (2013.01); H01L 21/76224 (2013.01); H01L 29/401 (2013.01); H01L 29/42324 (2013.01);
Abstract

The present invention discloses a manufacturing method for a semiconductor device. The manufacturing method includes: providing a substrate; forming a semiconductor stacked structure on the substrate; forming at least apart of a stacked cap layer on the semiconductor stacked structure, wherein the part of the stacked cap layer includes a nitride layer; removing a part of the nitride layer; forming the rest part of the stacked cap layer; forming a protection layer on the stacked cap layer, and etching the protection layer to form an opening, wherein the nitride layer is not exposed by the opening; and introducing an etchant material into the opening to etch the substrate. The present invention also provides a semiconductor device made by the method.


Find Patent Forward Citations

Loading…