The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Sep. 20, 2017
Applicant:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Inventor:
Kazuhide Sumiyoshi, Yokohama, JP;
Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/47 (2006.01); H01L 29/812 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/40 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/475 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/812 (2013.01); H01L 29/2003 (2013.01); H01L 29/402 (2013.01);
Abstract
A nitride semiconductor device is disclosed, where the nitride semiconductor device is a type of field effect transistor having a gate electrode and an insulating film covering the gate electrode. The gate electrode has stacked metals of nickel (Ni) and gold (Au), while, the insulating film is made of silicon nitride (Si). A feature of the gate electrode of the present invention is that the nickel layer contains silicon (Si) atoms at an atomic concentration from 0.01 at % to 10 at %.