The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Mar. 18, 2016
Applicant:
Panasonic Corporation, Osaka, JP;
Inventor:
Chiaki Kudou, Toyama, JP;
Assignee:
PANASONIC CORPORATION, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/32 (2006.01); H01L 29/34 (2006.01); H01L 29/36 (2006.01); C30B 25/20 (2006.01); C30B 29/36 (2006.01); C30B 33/00 (2006.01); C30B 23/02 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02024 (2013.01); H01L 21/02035 (2013.01); H01L 29/32 (2013.01); H01L 29/34 (2013.01); H01L 29/36 (2013.01); C30B 23/025 (2013.01); C30B 25/20 (2013.01); C30B 29/36 (2013.01); C30B 33/00 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 22/12 (2013.01);
Abstract
A silicon carbide semiconductor substrate according to an aspect of the present disclosure has a first principal surface and a second principal surface opposite to the first principal surface. The silicon carbide semiconductor substrate includes a silicon carbide semiconductor crystal, and a first affected layer having crystal disturbances and disposed under the first principal surface. A thickness of the first affected layer in a first region including a center of the first principal surface is smaller than a thickness of the first affected layer in a second region surrounding the first region in a plane view.