The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Sep. 01, 2017
Applicant:
Samsung Display Co., Ltd., Yongin-si, Gyeonggi-do, KR;
Inventors:
Assignee:
Samsung Display Co., Ltd., Yongin-Si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 31/112 (2006.01); H01L 51/52 (2006.01); G06K 9/00 (2006.01); H01L 51/50 (2006.01); H01L 27/12 (2006.01); H01L 31/113 (2006.01); G09G 3/3233 (2016.01); H02S 40/44 (2014.01);
U.S. Cl.
CPC ...
H01L 27/3262 (2013.01); G06K 9/00013 (2013.01); G09G 3/3233 (2013.01); H01L 27/1222 (2013.01); H01L 27/3227 (2013.01); H01L 27/3246 (2013.01); H01L 27/3258 (2013.01); H01L 27/3272 (2013.01); H01L 27/3276 (2013.01); H01L 31/1129 (2013.01); H01L 31/1136 (2013.01); H01L 51/50 (2013.01); H01L 51/5253 (2013.01); H02S 40/44 (2014.12); G09G 2310/0251 (2013.01); G09G 2310/0262 (2013.01); G09G 2354/00 (2013.01); H01L 27/1225 (2013.01); H01L 2251/303 (2013.01);
Abstract
An organic light emitting diode display device includes a substrate, a plurality of organic light emitting diodes on the substrate, a thin film encapsulation layer on the organic light emitting diodes, and at least one sensor on the thin film encapsulation layer, the sensor including a sensing gate electrode, an oxide semiconductor layer overlapping the sensing gate electrode, a sensing source electrode connected to the oxide semiconductor layer, and a sensing drain electrode spaced apart from the sensing source electrode and connected to the oxide semiconductor layer.