The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Sep. 27, 2017
Omnivision Technologies, Inc., Santa Clara, CA (US);
Eric A. G. Webster, Mountain View, CA (US);
Howard E. Rhodes, Nokomis, FL (US);
Dominic Massetti, San Jose, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
A method of image sensor fabrication includes forming a second semiconductor layer on a back side of a first semiconductor layer. The method also includes forming one or more groups of pixels disposed in a front side of the first semiconductor layer. The one or more groups of pixels include a first portion of pixels separated from the second semiconductor layer by a spacer region, and a second portion of pixels, where a first doped region of the second portion of pixels is in contact with the second semiconductor layer. Pinning wells are also formed and separate individual pixels in the one or more groups of pixels, and the pinning wells extend through the first semiconductor layer. Deep pinning wells are also formed and separate the one or more groups of pixels.