The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2019

Filed:

Jul. 26, 2017
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

JunHyeon Bae, Goyang-si, KR;

JongUk Bae, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 21/8238 (2006.01); H01L 21/18 (2006.01); H01L 21/425 (2006.01); H01L 29/10 (2006.01); H01L 27/12 (2006.01); H01L 21/44 (2006.01); H01L 21/34 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); H01L 21/823871 (2013.01); H01L 29/1054 (2013.01); H01L 29/41733 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78633 (2013.01); H01L 29/78696 (2013.01);
Abstract

Disclosed is a thin film transistor including both an N-type semiconductor layer and a P-type semiconductor layer, a method for manufacturing the same, and a display device including the same, wherein the thin film transistor may include a first gate electrode on a substrate; a first gate insulating film covering the first gate electrode; a semiconductor layer on the first gate insulating film; a second gate insulating film covering the semiconductor layer; and a second gate electrode on the second gate insulating film, wherein the semiconductor layer includes the N-type semiconductor layer and the P-type semiconductor layer.


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