The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2019

Filed:

Oct. 13, 2015
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Jun Hyun Park, Suwon-si, KR;

Do-Hyun Kim, Seongnam-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/77 (2017.01); C08G 77/16 (2006.01); G02F 1/1333 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); H01L 27/1244 (2013.01); H01L 27/1248 (2013.01); B32B 2457/202 (2013.01); C08G 77/16 (2013.01); G02F 1/133345 (2013.01); G02F 2001/136263 (2013.01); G02F 2001/136295 (2013.01); H01L 2021/775 (2013.01); Y10T 428/10 (2015.01);
Abstract

A thin film transistor array panel, including: a first insulating substrate; a gate line disposed on the first insulating substrate and including a gate electrode; a semiconductor layer disposed on the gate electrode; a data conductor layer disposed on the semiconductor layer, and including a data line crossing the gate line, a source electrode connected to the data line and exposing at least a part of the semiconductor layer, and a drain electrode facing the source electrode; a capping layer disposed on the data conductor layer, the semiconductor layer exposed between the source electrode and the drain electrode, and the entire surface of the first insulating substrate; and a first passivation layer disposed on the capping layer. The capping layer and the semiconductor layer include the same material.


Find Patent Forward Citations

Loading…