The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2019

Filed:

Oct. 27, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Qin Yuan, Poughquag, NY (US);

Jun Liu, Poughquag, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/02 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 7/16 (2006.01); G03F 7/038 (2006.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); G03F 7/0387 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2002 (2013.01); G03F 7/32 (2013.01); H01L 21/02118 (2013.01); H01L 21/02282 (2013.01); H01L 21/02345 (2013.01); H01L 2224/0391 (2013.01); H01L 2924/07025 (2013.01); H01L 2924/3511 (2013.01); H01L 2924/35121 (2013.01);
Abstract

A method of forming a passivation layer on an integrated circuit (IC) chip including a device layer on a substrate. The method may include forming a crosslinked precursor passivation layer on the IC chip, and curing the crosslinked precursor passivation layer at a first temperature to form a passivation layer. The method may further include maintaining the device layer at a second, lower temperature during the curing of the crosslinked precursor passivation layer. Maintaining the device layer at the second, lower temperature may mitigate and/or prevent damage to the device layer conventionally caused by exposure to the first temperature during the curing of the crosslinked precursor passivation layer. The method may include using a curing system including a chamber, an infrared source for controlling the first temperature for curing the crosslinked precursor passivation layer, and a temperature control device for controlling the second, lower temperature of the device layer.


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