The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Nov. 17, 2017
Hitachi, Ltd., Tokyo, JP;
Yuan Bu, Tokyo, JP;
HITACHI, LTD., Tokyo, JP;
Abstract
A technology is proposed in which the improvement of the capability of a semiconductor device can be realized by satisfying both reduction of leakage currents and suppression of the degradation of the conductive characteristic of the semiconductor device. An electric field relaxation region ERR is formed in an outer edge region on the outside of a mesa structure MS. In addition, an electric charge implantation region EIR formed on a drift layer EPI, a resistance reduction region RR formed on the electric charge implantation region EIR, and a leakage reduction region LR formed at a sidewall portion of the mesa structure MS are formed in the mesa structure MS. In this case, the impurity concentration of the leakage reduction region LR is set larger than the impurity concentration of the electric field relaxation region ERR, and is set smaller than the impurity concentration of the resistance reduction region RR.