The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Mar. 01, 2018
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Onintza Ros Bengoechea, Mountain View, CA (US);
Nancy Fung, Livermore, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/311 (2006.01); C09K 13/08 (2006.01); H01L 21/67 (2006.01); H01L 21/768 (2006.01); H01L 21/306 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); C09K 13/08 (2013.01); H01L 21/30608 (2013.01); H01L 21/31138 (2013.01); H01L 21/32137 (2013.01); H01L 21/67069 (2013.01); H01L 21/76802 (2013.01);
Abstract
Exemplary methods for selectively removing silicon nitride may include flowing a fluorine-containing precursor, and oxygen-containing precursor and a silicon-containing precursor into a local plasma to form plasma effluents. The plasma effluents may remove silicon nitride at significantly higher etch rates compared to exposed silicon oxide on the substrate. The methods may also remove silicon nitride more rapidly that silicon carbide and silicon oxycarbide which broadens the utility of the present technology to semiconductor applications.