The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
May. 15, 2018
Hrl Laboratories, Llc, Malibu, CA (US);
Rongming Chu, Agoura Hills, CA (US);
Yu Cao, Agoura Hills, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
Lateral PN junctions and diodes and transistors comprising lateral PN junctions and methods used in making such devices are disclosed. A method of fabricating a lateral PN junction, can comprise: conformally growing p−GaN material on a n−GaN vertical surface extending vertically from an n−GaN horizontal surface on an n−GaN drift layer to form a first PN junction, wherein the n−GaN horizontal surface extends horizontally from the n−GaN vertical surface and the n−GaN horizontal surface has a layer of dielectric material formed on the n−GaN horizontal surface that extends from the p−GaN surface.