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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10283351 B1

PDFFull Text
Date of Patent:
May. 07, 2019

Filed:

Jan. 26, 2016

Single-crystal silicon carbide substrate, method for producing single-crystal silicon carbide substrate, and method for inspecting single-crystal silicon carbide substrate

Applicant:

Hitachi Metals, Ltd., Minato-ku, Tokyo, JP;

Inventors:

Taisuke Hirooka, Tokyo, JP;

Hiroyuki Okuda, Tokyo, JP;

Assignee:

HITACHI METALS, LTD., Tokyo, JP;

Attorneys:

Nixon Peabody LLP

Jeffrey L. Costellia

Primary Examiner:

Jonathan C Langman

Int. Cl.
CPC ...
H01L 21/02 (2006.01); G01N 23/2251 (2018.01); H01L 21/66 (2006.01); C30B 29/36 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02236 (2013.01); C30B 29/36 (2013.01); G01N 23/2251 (2013.01); H01L 21/02008 (2013.01); H01L 21/02013 (2013.01); H01L 21/02019 (2013.01); H01L 21/02024 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01); G01N 2223/418 (2013.01); G01N 2223/634 (2013.01); H01L 29/1608 (2013.01);
Abstract

A single-crystal silicon carbide substrate has a main surface having a surface roughness fulfilling Ra≤1 nm, and has a ratio of hidden scratches of less than 50%, where, in the case where the main surface is arbitrary observed at 50 or more observation points with a field of view having a diameter of 100 μm, the ratio of hidden scratches is defined by a value obtained by dividing the number of the observation points at which a striped hidden scratch having a length of at least 50 μm by the total number of the observation points.

Find Patent Forward Citations

Hirooka, Taisuke. (2019). Single-crystal silicon carbide substrate, method for producing single-crystal silicon carbide substrate, and method for inspecting single-crystal silicon carbide substrate (U.S. Patent No. 10283351). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10283351

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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