The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2019

Filed:

May. 16, 2016
Applicant:

Okinawa Institute of Science and Technology School Corporation, Kunigami-gun, Okinawa, JP;

Inventors:

Yabing Qi, Kunigami-gun, JP;

Sonia Ruiz Raga, Kunigami-gun, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 9/20 (2006.01); H01L 51/00 (2006.01); H01L 51/42 (2006.01); H01G 9/00 (2006.01);
U.S. Cl.
CPC ...
H01G 9/2009 (2013.01); H01G 9/0036 (2013.01); H01L 51/005 (2013.01); H01L 51/0007 (2013.01); H01L 51/0008 (2013.01); H01L 51/0028 (2013.01); H01L 51/0077 (2013.01); H01L 51/4226 (2013.01); H01L 51/4253 (2013.01); Y02E 10/549 (2013.01); Y02P 70/521 (2015.11);
Abstract

A method of forming a perovskite film is provided, the method comprising inducing a chemical reaction between a metal halide compound and methylamine (CHNH) gas. Specifically, the method includes: forming a metal halide film on a substrate; and exposing the metal halide film to the methylamine (CHNH) gas for inducing the chemical reaction between the metal halide compound and the methylamine (CHNH) gas to form a perovskite film. Post treatments can be carried out by adding a step of exposing the perovskite film to hydriodic acid (HI) gas and methylamine (CHNH) gas sequentially or simultaneously.


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