The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2019

Filed:

Jun. 01, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Ho-young Shin, Gunpo-si, KR;

Myeong-hee Oh, Seongnam-si, KR;

Ji-sung Kim, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/30 (2006.01); G11C 16/04 (2006.01); G11C 16/32 (2006.01); G11C 16/12 (2006.01); G06F 12/02 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/30 (2013.01); G06F 12/0246 (2013.01); G11C 16/0425 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/12 (2013.01); G11C 16/32 (2013.01); G06F 2212/7201 (2013.01);
Abstract

A non-volatile memory device includes a memory cell array including a plurality of memory cells, wherein at least one selected memory cell that is selected from among the plurality of memory cells is programmed based on a high voltage, a high voltage generator configured to generate the high voltage by boosting an input voltage based on a pumping clock, a pumping clock generator configured to generate the pumping clock, a program current controller configured to adjust a program current flowing in the at least one selected memory cells, and a control logic configured to control a frequency of the pumping clock and an amount of the program current based on a time in a program section in which the at least one selected memory cell is programmed.


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