The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Aug. 04, 2017
Applicant:
SK Hynix Inc., Icheon, KR;
Inventors:
Assignee:
SK hynix Inc., Icheon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0033 (2013.01); G06F 3/0604 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01); G11C 13/0002 (2013.01); G11C 13/004 (2013.01); G11C 13/0004 (2013.01); G11C 2013/0052 (2013.01); G11C 2213/76 (2013.01);
Abstract
A method for reading a data of a memory cell comprising a selection device and a resistive memory device which has a high resistance state or a low resistance state according to a data stored therein includes: applying a first read voltage to the memory cell; applying a second read voltage to the memory cell, the second read voltage having a level lower than a level of the first read voltage; and sensing the data of the memory cell while the second read voltage is applied to the memory cell.