The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Jun. 25, 2016
Qualcomm Incorporated, San Diego, CA (US);
Benjamin John Bowers, Cary, NC (US);
Anthony Correale, Jr., Raleigh, NC (US);
Tracey Della Rova, Wake Forest, NC (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Systems and methods relate to cell placement methodologies for improving length of diffusion of transistors. For example, a first transistor with a first diffusion node which is bounded by a first diffusion cut is identified in a transistor level layout. The first diffusion cut is replaced with a first floating gate, and a first filler cell with a first filler diffusion region is added to extend a length of diffusion of the first diffusion node. Increasing the length of diffusion leads to improving drive strength and performance of the first transistor.