The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Jul. 06, 2017
Tsinghua University, Beijing, CN;
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Ke-Nan Zhang, Beijing, CN;
Ming-Zhe Yan, Beijing, CN;
Shu-Yun Zhou, Beijing, CN;
Yang Wu, Beijing, CN;
Shou-Shan Fan, Beijing, CN;
Tsinghua University, Beijing, CN;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Abstract
The disclosure relates to a method for making semimetal compound of Pt. The semimetal compound is a single crystal material of PtSe. The method comprises: placing pure Pt and pure Se in a reacting chamber as reacting materials; evacuating the reacting chamber to be vacuum less than 10 Pa; heating the reacting chamber to a first temperature of 600 degrees Celsius to 800 degrees Celsius and keeping for 24 hours to 100 hours; cooling the reacting chamber to a second temperature of 400 degrees Celsius to 500 degrees Celsius and keeping for 24 hours to 100 hours at a cooling rate of 1 degrees Celsius per hour to 10 degrees Celsius per hour to obtain a crystal material of PtSe; and separating the excessive reacting materials from the crystal material of PtSe.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile