The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2019

Filed:

Aug. 29, 2016
Applicant:

United Technologies Corporation, Farmington, CT (US);

Inventors:

David A. Litton, West Hartford, CT (US);

Brian S. Tryon, Los Gatos, CA (US);

Assignee:

United Technologies Corporation, Farmington, CT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 28/00 (2006.01); C23C 14/02 (2006.01); C23C 14/08 (2006.01); C23C 14/30 (2006.01); F01D 5/28 (2006.01); C23C 28/04 (2006.01); C23C 14/24 (2006.01); C23C 14/54 (2006.01); F01D 25/00 (2006.01);
U.S. Cl.
CPC ...
C23C 28/347 (2013.01); C23C 14/025 (2013.01); C23C 14/08 (2013.01); C23C 14/083 (2013.01); C23C 14/243 (2013.01); C23C 14/30 (2013.01); C23C 14/542 (2013.01); C23C 28/042 (2013.01); C23C 28/321 (2013.01); C23C 28/3215 (2013.01); C23C 28/345 (2013.01); C23C 28/3455 (2013.01); F01D 5/288 (2013.01); F01D 25/005 (2013.01); F05D 2220/32 (2013.01); Y10T 428/24975 (2015.01);
Abstract

The thermal barrier coating system comprises a matrix of a first chemistry with multiple embedded second phases of a second chemistry. The matrix comprises a stabilized zirconia. The second regions comprise at least 40 mole percent of oxides having the formula LnO, where Ln is selected from the lanthanides La through Lu, Y, Sc, In, Ca, and Mg with the balance zirconia (ZrO), hafnia (HfO), titania (TiO), or mixtures thereof. The second phases have a characteristic thickness (T) of less than 2.0 micrometers (μm). The spacing between second phases has a characteristic thickness (T) of less than 8.0 micrometers (μm).


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