The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Sep. 19, 2016
Applicant:
Apple Inc., Cupertino, CA (US);
Inventors:
Matthew S. Rogers, Cupertino, CA (US);
Avery P. Yuen, Cupertino, CA (US);
Xianwei Zhao, Cupertino, CA (US);
Assignee:
APPLE INC., Cupertino, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/48 (2006.01); H01L 33/56 (2010.01); H01L 33/58 (2010.01); C04B 41/00 (2006.01); C23C 14/08 (2006.01);
U.S. Cl.
CPC ...
C23C 14/48 (2013.01); C04B 41/00 (2013.01); C23C 14/081 (2013.01);
Abstract
A sapphire structure including an ion-implanted, anti-reflective layer and a method of forming an ion-implanted, anti-reflective layer within a sapphire component is disclosed. The method includes forming an ion-implanted layer in a sapphire material at a first depth, and annealing the sapphire material to a second depth. The second depth may be greater than or equal to the first depth. The ion-implanted layer may have a first index of refraction, and the sapphire material may have a second index of refraction different from the first index of refraction.