The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2019

Filed:

Jan. 08, 2015
Applicant:

Mediatek Singapore Pte. Ltd., Singapore, SG;

Inventors:

Yung-Chih Yen, Tainan, TW;

Patrick Stanley Riehl, Cambridge, MA (US);

Hasnain Akram, Woburn, MA (US);

Anand Satyamoorthy, Somerville, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02J 50/10 (2016.01); H01F 38/14 (2006.01); H04B 5/00 (2006.01); H02J 50/12 (2016.01); H02J 5/00 (2016.01); H02J 7/02 (2016.01); H02M 3/156 (2006.01); H02M 3/07 (2006.01); H02M 7/217 (2006.01); G05F 1/575 (2006.01); H02M 1/00 (2006.01); H02M 7/219 (2006.01); G05F 1/56 (2006.01);
U.S. Cl.
CPC ...
H02J 50/12 (2016.02); G05F 1/575 (2013.01); H01F 38/14 (2013.01); H02J 5/005 (2013.01); H02J 7/025 (2013.01); H02M 3/07 (2013.01); H02M 3/156 (2013.01); H02M 7/217 (2013.01); H04B 5/0037 (2013.01); G05F 1/56 (2013.01); H02M 2001/0045 (2013.01); H02M 2007/2195 (2013.01); Y02B 70/1408 (2013.01); Y02B 70/1425 (2013.01); Y02B 70/1441 (2013.01);
Abstract

A wireless power receiver IC in which the power path can be reconfigured as either a low-dropout regulator (LDO), a switched-mode power supply (SMPS) or a power switch (PSW) is provided. All three modes share the same pass device to reduce die area and share the same output terminal to reduce pin. In an inductive wireless receiver, the power path can be reprogrammed on the fly to LDO or PSW mode or can be reprogrammed on the fly to SMPS or PSW mode. In a resonant or multi-mode wireless receiver, the power path can be reprogrammed on the fly to SMPS or PSW mode. Furthermore, to achieve high power transfer efficiency performance, using N-channel MOSFET as its pass device has better efficiency and smaller die area than P-channel MOSFET pass device.


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