The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2019

Filed:

Jun. 17, 2016
Applicant:

Wuhan Yangtze Soton Laser Co. Ltd., Hubei, CN;

Inventors:

Weijia Yang, Hubei, CN;

Kangkang Chen, Hubei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/067 (2006.01); H01S 5/022 (2006.01); H01S 5/50 (2006.01); G02F 1/365 (2006.01); H01S 5/042 (2006.01); H01S 5/40 (2006.01);
U.S. Cl.
CPC ...
H01S 3/06758 (2013.01); G02F 1/365 (2013.01); H01S 3/06725 (2013.01); H01S 5/02284 (2013.01); H01S 5/5018 (2013.01); H01S 5/0428 (2013.01); H01S 5/4025 (2013.01);
Abstract

A novel broadband light source composed of supercontinuum light source and high-power single-wavelength semiconductor laser diodes. It includes an electronics control board, a supercontinuum light source, and a series of single-wavelength semiconductor laser diodes. The frequency of each single-wavelength semiconductor laser diodes is adjusted to integer times or division times of a frequency of the supercontinuum light source by using the electronics control board. Weaknesses of the supercontinuum light source that it is difficult to cover a wavelength less than 400 nm and power density at a wavelength of 400-2400 nm is less than 10 mW/nm are compensated by using the single-wavelength semiconductor lasers. Wavelengths of the single-wavelength semiconductor laser diodes can cover 375-2400 nm, and the highest power density can reach 200 mW/nm, so that the novel broadband light source composed by the single-wavelength semiconductor laser diodes is applicable to a field such as spectral microscopy in a range of 375-400 nm. In addition, by means of electronics clock control on the single-wavelength semiconductor laser diodes and a pulse generation circuit of the supercontinuum light source, same-phase output of the single-wavelength semiconductor laser diodes and the supercontinuum light source can be kept, and relative pulse delays are flexible and adjustable.


Find Patent Forward Citations

Yang, Weijia. (2019). Broadband light source composed of supercontinuum light source and single-wavelength semiconductor laser diodes (U.S. Patent No. 10277000). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10277000

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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