The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2019

Filed:

Dec. 11, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Joel P. de Souza, Putnam Valley, NY (US);

Bahman Hekmatshoartabari, White Plains, NY (US);

Daniel M. Kuchta, Patterson, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/42 (2006.01); H01L 31/18 (2006.01); H01L 27/14 (2006.01); H01L 31/112 (2006.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
H01L 51/4213 (2013.01); H01L 27/14 (2013.01); H01L 31/1129 (2013.01); H01L 31/1804 (2013.01); H01L 31/20 (2013.01); H01L 51/428 (2013.01); Y02E 10/547 (2013.01); Y02E 10/549 (2013.01); Y02P 70/521 (2015.11);
Abstract

A semiconductor device that includes a layer of highly crystalline semiconductor material positioned on an insulating substrate. The semiconductor device also includes a source structure and a drain structure positioned on the layer of highly crystalline semiconductor material. The semiconductor device also includes a photoelectric element positioned on the layer of highly crystalline semiconductor material. The photoelectric element forms an electrical junction with the layer of highly crystalline semiconductor material. The photoelectric element is positioned between the source structure and the drain structure. The photoelectric element is also electrically floating.


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