The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10276778 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 30, 2019

Filed:

Aug. 10, 2017
Applicant:

Ricoh Company, Ltd., Tokyo, JP;

Inventor:

Xianfeng Chen, Kanagawa, JP;

Assignee:

Ricoh Company, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D 3/00 (2006.01); C08J 7/18 (2006.01); G21H 5/00 (2006.01); H01L 41/39 (2013.01); B41J 2/14 (2006.01); B41J 2/16 (2006.01); H01L 41/09 (2006.01); H01L 41/113 (2006.01); H01L 41/18 (2006.01); H01L 21/02 (2006.01); H01L 41/318 (2013.01); H01L 37/02 (2006.01);
U.S. Cl.
CPC ...
H01L 41/39 (2013.01); B41J 2/14 (2013.01); B41J 2/16 (2013.01); B41J 2/161 (2013.01); B41J 2/1628 (2013.01); B41J 2/1629 (2013.01); B41J 2/1631 (2013.01); B41J 2/1634 (2013.01); B41J 2/1642 (2013.01); B41J 2/1645 (2013.01); B41J 2/1646 (2013.01); H01L 21/02345 (2013.01); H01L 41/09 (2013.01); H01L 41/1132 (2013.01); H01L 41/1134 (2013.01); H01L 41/183 (2013.01); H01L 41/318 (2013.01); H01L 37/02 (2013.01); H01L 41/0973 (2013.01);
Abstract

A crystal pattern forming method includes: an electromagnetic wave absorbing layer forming process for forming an electromagnetic wave absorbing layer on one of surfaces of a substrate; an amorphous film forming process for forming an amorphous film on the electromagnetic wave absorbing layer; a mask forming process for forming an electromagnetic wave blocking mask for blocking an electromagnetic wave on the other one of the surfaces of the substrate; and a crystallizing process for causing the substrate to be irradiated with the electromagnetic wave from the other one of the surfaces of the substrate through the electromagnetic wave blocking mask to crystallize a given region in the amorphous film. In the mask forming process, a recessed structure is formed on the other one of the surfaces of the substrate, by selectively removing the other one of the surfaces of the substrate to form a recessed portion.


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Chen, Xianfeng. (2019). Crystal pattern forming method, piezoelectric film producing method, piezoelectric element producing method, and liquid discharging head producing method (U.S. Patent No. 10276778). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10276778

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