The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Mar. 23, 2017
Joled Inc., Chiyoda-ku, Tokyo, JP;
Toshiaki Yoshitani, Tokyo, JP;
Shinichi Ushikura, Tokyo, JP;
JOLED INC., Tokyo, JP;
Abstract
A thin film transistor includes an oxide semiconductor layer including a channel region, and a source region and a drain region having a resistivity lower than that of the channel region; a gate insulating layer disposed on the channel region of the oxide semiconductor layer; a gate electrode disposed on the gate insulating layer; and an aluminum oxide layer covering the lateral surface of the gate insulating layer, and the source region and the drain region, wherein the gate insulating layer has a multi-layer structure including a first insulating layer and a second insulating layer, and the first insulating layer contains silicon oxide as a main component, and is disposed on and in contact with the channel region.