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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10276713 B1

PDFFull Text
Date of Patent:
Apr. 30, 2019

Filed:

Apr. 14, 2017

Semiconductor component and method of manufacture

Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Chun-Li Liu, Scottsdale, AZ (US);

Balaji Padmanabhan, Tempe, AZ (US);

Ali Salih, Mesa, AZ (US);

Peter Moens, Zottegem, BE;

Assignee:

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);

Attorney:

Rennie William Dover

Primary Examiner:

Natalia A Gondarenko

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 29/10 (2006.01); H01L 29/778 (2006.01); H01L 21/74 (2006.01); H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 21/762 (2006.01); H01L 29/417 (2006.01); H01L 21/76 (2006.01); H01L 21/763 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/743 (2013.01); H01L 21/746 (2013.01); H01L 21/763 (2013.01); H01L 21/7605 (2013.01); H01L 21/76224 (2013.01); H01L 21/76898 (2013.01); H01L 29/0607 (2013.01); H01L 29/2003 (2013.01); H01L 29/4175 (2013.01); H01L 29/66318 (2013.01); H01L 29/66462 (2013.01); H01L 29/66666 (2013.01); H01L 29/7786 (2013.01); H01L 29/0649 (2013.01); H01L 29/1075 (2013.01);
Abstract

In accordance with an embodiment, a semiconductor component includes a plurality of layers of compound semiconductor material over a body of semiconductor material and first and second filled trenches extending into the plurality of layers of compound semiconductor material. The first trench has first and second sidewalls and a floor and a first dielectric liner over the first and second sidewalls and the second trench has first and second sidewalls and a floor and second dielectric liner over the first and second sidewalls of the second trench.

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