The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Jun. 12, 2017
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Youichi Kamada, Yamato, JP;
Shirou Ozaki, Yamato, JP;
FUJITSU LIMITED, Kawasaki, JP;
Abstract
A compound semiconductor device includes: a carrier transit layer; a carrier supply layer over the carrier transit layer; a source electrode and a drain electrode above the carrier supply layer; a gate electrode above the carrier supply layer between the source electrode and the drain electrode; and a first insulating film and a second insulating film above the carrier supply layer between the gate electrode and the drain electrode. The gate electrode includes a portion above the second insulating film, the second insulating film covers a side surface of the first insulating film from the drain electrode side, and a second concentration of electron traps in the second insulating film is higher than a first concentration of electron traps in the first insulating film.