The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Nov. 29, 2017
Sii Semiconductor Corporation, Chiba-shi, Chiba, JP;
Yuki Osuga, Chiba, JP;
Hirofumi Harada, Chiba, JP;
ABLIC INC., Chiba, JP;
Abstract
A semiconductor device includes: a drain region formed on a rear surface side of a substrate; a base layer formed between the drain region and a front surface of the substrate; a trench formed in the substrate; a gate insulating film covering an inner surface of the trench from a bottom of the trench to a first height; a gate electrode filling the trench to the first height; an insulating film filling the trench to a second height higher than the first height; a source electrode filling a remaining part of the trench; a base contact region formed in a surface of the substrate and has one side contacting the source electrode; and a source region having an upper surface contacting a part of a bottom surface of the base contact region, one side contacting a side of the trench and is partially contacting the source electrode.