The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2019

Filed:

Jun. 26, 2017
Applicants:

Hyundai Motor Company, Seoul, KR;

Kia Motors Corporation, Seoul, KR;

Inventor:

Dae Hwan Chun, Gyeonggi-do, KR;

Assignees:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 29/4236 (2013.01); H01L 29/66 (2013.01); H01L 29/66068 (2013.01); H01L 29/7802 (2013.01); H01L 29/7827 (2013.01); H01L 29/7831 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device includes a n− type layer disposed at a first surface of a n+ type silicon carbide substrate and a trench disposed at the n− type layer. Additionally, a first gate electrode and a second gate electrode are disposed in the trench and separated from each other. A source electrode is insulated from the first gate electrode and the second gate electrode. Further, the semiconductor includes a drain electrode that is disposed at a second surface of the n+ type silicon carbide substrate, a first channel disposed adjacent to a side surface of the trench and a second channel disposed under the lower surface of the trench. The first channel and the second channel are separated from each other.


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