The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Jun. 27, 2016
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Toshiaki Sakata, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Abstract
A semiconductor device including a substrate, an active portion and a well region both formed in the substrate on a first surface side thereof, and a low-resistivity layer formed in the substrate on a second surface side thereof. A first parallel pn structure is formed in the substrate between the active portion and the low-resistivity layer, the first parallel pn structure having a first region and a second region that are repeatedly alternated at a first repetition pitch. A second parallel pn structure is formed in the substrate between the well region and the low-resistivity layer, the second parallel pn structure having a third region and a fourth region that are repeatedly alternated at a second repetition pitch that is smaller than the first repetition pitch, the well region and the second parallel pn structure being isolated from each other.