logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10276636 B1

PDFFull Text
Date of Patent:
Apr. 30, 2019

Filed:

May. 26, 2016

Electronic device and method for fabricating the same

Applicant:

SK Hynix Inc., Icheon-Si, KR;

Inventor:

In-Hoe Kim, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:

Perkins Coie LLP

Primary Examiner:

Allison Bernstein

Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); G06F 3/06 (2006.01); G06F 12/0802 (2016.01); G06F 13/40 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2436 (2013.01); G06F 3/061 (2013.01); G06F 3/0656 (2013.01); G06F 3/0679 (2013.01); G06F 12/0802 (2013.01); G06F 13/4068 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 45/08 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/1266 (2013.01); H01L 45/145 (2013.01); G06F 2212/2024 (2013.01); G06F 2212/60 (2013.01);
Abstract

Implementations of the disclosed technology provide an electronic device including a semiconductor memory and a method for fabricating the same, in which processes are easily performed and the characteristics of a variable resistance element are improved. An electronic device according to an implementation of the disclosed technology is an electronic device including a semiconductor memory, wherein the semiconductor memory includes: a substrate; a conductive contact plug formed over the first conductive layer and including a stack of a conductive low-resistance structure and a conductive planarizing layer; and a variable resistance pattern coupled to the contact plug, wherein the low-resistance structure comprises a diffusion barrier layer, a low-resistance material layer and a gap-fill layer.

Find Patent Forward Citations

Quick Actions:

Kim, In-Hoe. (2019). Electronic device and method for fabricating the same (U.S. Patent No. 10276636). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10276636

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…