The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Mar. 28, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Kwang Ho Lee, Seoul, KR;
Kwang Ho Kim, Suwon-si, KR;
Seung Hynu Cho, Suwon-si, KR;
Ji Hwan Yu, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A vertical memory device includes a substrate having a cell array region and a connection region adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region of the substrate, and forming a stepped structure in the connection region, a first metal line dividing the plurality of gate electrode layers and connected to the cell array region and the connection region of the substrate, and a second metal line dividing a portion of the plurality of gate electrode layers and connected to the connection region of the substrate. A depth of a lower end portion of the second metal line may be greater than a depth of a lower end portion of the first metal line in the cell array region, based on an upper surface of the substrate.